Ijascse, Vol 1, Issue 4, 2012

AlN thin film was prepared over different metal substrates using DC sputtering at various sputtering parameters. The XRD spectra revealed the presence of mixed (cubic and hexagonal) phases for all samples other than samples prepared at 300W with Ar:N2 gas ratio of 14:6. The intensities of cubic phases observed at copper (Cu) substrates increased drastically with high sputtering power and N2 gas flow. Low intensive peak was observed at gas mixer ratio of 14:6. N2 flow and sputtering power influenced the crystallinity of the AlN thin film with respect to the substrates. Mixed residual stress (compressive and tensile) was observed for all samples and high values were observed at 300W sputtering power at low N2 gas flow. Crystallite size of AlN thin film varied with respect to sputtering power, gas flow ratio and also substrates. AlN thin film prepared at 250 W showed high dislocation density at high N2 gas flow ratio. Atomic force microscope results showed rough surface for AlN thin film coated over Al substrates and increased high value was observed at high N2 gas flow ratio. The particle size of the AlN thin films increased with N2 gas flow increased with respect to sputtering power and high value was observed with Al